AO6415 20v p-channel mosfet general description product summary v ds -20v i d (at v gs =-10v) -3.3a r ds(on) (at v gs = -10v) < 82m w r ds(on) (at v gs = -4.5v) < 100m w r ds(on) (at v gs = -2.5v) < 140m w typical esd protection hbm class 2 symbol the AO6415 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable fo r use as a load switch or in pwm applications. absolute maximum ratings t a =25c unless otherwise noted parameter maximum units tsop6 top view bottom view pin1 s g d top view d d g d s d 1 2 3 6 5 4 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead 56 70 c/w maximum junction-to-ambient a r q ja 82 100 c/w maximum junction-to-ambient a d 111 140 c/w junction and storage temperature range -55 to 150 c thermal characteristics parameter typ max units power dissipation b t a =25c p d 1.25 w t a =70c 0.8 continuous drain current t a =25c i d -3.3 a t a =70c -2.7 pulsed drain current c -17 drain-source voltage -20 v gate-source voltage 12 v parameter maximum units rev 2: jul 2011 www.aosmd.com page 1 of 5
AO6415 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.5 -0.85 -1.2 v i d(on) -17 a 68 82 t j =125c 95 115 80 100 m w 107 140 m w g fs 8.6 s v sd -0.76 -1 v i s -1.5 a c iss 250 325 400 pf c oss 40 63 85 pf c rss 22 37 52 pf r g 11.2 17 w q g 3.2 4.5 nc q gs 0.6 nc q gd 0.9 nc t d(on) 11 ns t 5.5 ns turn-on delaytime v =-4.5v, v =-10v, r =5 w , turn-on rise time switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-2a gate source charge gate drain charge gate resistance v gs =0v, v ds =0v, f=1mhz diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-10v, f=1mhz output capacitance reverse transfer capacitance m w v gs =-4.5v, i d =-2a v gs =-2.5v, i d =-1a forward transconductance v ds =-5v, i d =-3.3a gate-body leakage current v ds =0v, v gs = 12v v ds =v gs , i d =-250 ma on state drain current v gs =-4.5v, v ds =-5v r ds(on) static drain-source on-resistance v gs =-10v, i d =-3.3a i dss zero gate voltage drain current m a electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 m a, v gs =0v t r 5.5 ns t d(off) 22 ns t f 8 ns t rr 6.1 ns q rr 1.4 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-2a, di/dt=100a/ m s v gs =-4.5v, v ds =-10v, r l =5 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-2a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 2: jul 2011 www.aosmd.com page 2 of 5
AO6415 typical electrical and thermal characteristics 0 3 6 9 12 0 1 2 3 4 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 50 80 110 140 170 0 2 4 6 8 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.80 1.00 1.20 1.40 1.60 1.80 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) 25 c 125 c v ds =-5v v gs =-2.5v v gs =-10v 0 5 10 15 20 25 30 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-2.0v - 4.5v - 10v -2.5v -3.5v v gs =-4.5v i d =-3.3a, v gs =-10v i d =-2a, v gs =-4.5v i d =-1a, v gs =-2.5v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 30 60 90 120 150 180 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-3.3a 25 c 125 c rev 2: jul 2011 www.aosmd.com page 3 of 5
AO6415 typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 150 300 450 600 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-2a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms t j(max) =150 c t a =25 c ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =140 c/w t on t p d rev 2: jul 2011 www.aosmd.com page 4 of 5
AO6415 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt rr q = - idt t rr -isd f -i v dc d u t v dd vgs v ds v gs r l r g resistive switching test circuit & w aveform s - + vgs v ds t t t t t t 90% 10% r o n d(o ff) f o ff d(o n) ig v gs - + v d c isd di/dt r m v dd v dd -vds -i rev 2: jul 2011 www.aosmd.com page 5 of 5
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